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ixfn36n100 IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100
ixfn36n100 IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100
ixfn36n100 IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

Manufacturer:
IXYS
Manufacturer Part No:
IXFN36N100
Enrgtech Part No:
ET100690207
Warranty:
Manufacturer
JOD 62.30 JOD 62.30
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
36A
Maximum Drain Source Voltage Vds:
1kV
Series:
HiperFET
Package Type:
SOT-227
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
240mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
700W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
380nC
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Width:
25.42 mm
Height:
9.6mm
Length:
38.23mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b80a3c587.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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